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  2n6660, 2n6660-2, 2N6660JANTX, 2N6660JANTXv www.vishay.com vishay siliconix s11-1542-rev. d, 01-aug-11 1 document number: 70223 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 www.vishay.com/doc?67884 n-channel 60 v (d-s) mosfet features ? military qualified ? low on-resistence: 1.3 ? ? low threshold: 1.7 v ? low input capacitance: 35 pf ? fast switching speed: 8 ns ? low input and output leakage benefits ? guaranteed reliability ?low offset voltage ? low-voltage operation ? easily driven without buffer ? high-speed circuits ? low error voltage applications ? hi-rel systems ? direct logic-level interface: ttl/cmos ? drivers: relays, solenoid s, lamps, hammers, displays, memories, transistors, etc. ? battery operated systems ?solid-state relays notes a. pulse width limited by maximum junction temperature. b. not required by military spec. product summary v ds (v) 60 r ds(on) ( ? ) at v gs = 10 v 3 configuration single 1 2 3 to-205ad (to-39) top view d g s ordering information part package description/dscc part number vishay ordering part number 2n6660 to-205ad (to-39) commercial 2n6660 commercial, lead (pb)-free 2n6660-e3 2n6660-2 see -2 flow document 2n6660-2 2N6660JANTX jantx2n6660 (std au leads) 2n6660jtx02 jantx2n6660 (with solder) 2n6660jtxl02 jantx2n6660p (with pind) 2n6660jtxp02 2N6660JANTXv jantxv2n6660 (std au leads) 2n6660jtxv02 jantxv2n6660p (with pind) 2n6660jtvp02 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 0.99 a t c = 100 c 0.62 pulsed drain current a i dm 3 maximum power dissipation t c = 25 c p d 6.25 w t a = 25 c 0.725 thermal resistance, junction-to-ambient b r thja 170 c/w thermal resistance, junction-to-case r thjc 20 operating junction and storage temperature range t j , t stg - 55 to 150 c
2n6660, 2n6660-2, 2N6660JANTX, 2N6660JANTXv www.vishay.com vishay siliconix s11-1542-rev. d, 01-aug-11 2 document number: 70223 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. for design aid only, not subject to production testing. b. pulse test: pw ? 300 s duty cycle ? 2 %. c. switching time is essentially independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t a = 25 c, unless otherwise noted) parameter symbol test conditions limits unit min. typ. a max. static drain-source breakdown voltage v ds v ds = 0 v, i d = 10 a 60 75 - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 1 ma 0.8 1.7 2 t c = - 55 c - - 2.5 t c = 125 c 0.3 - - gate-body leakage i gss v gs = 20 v v ds = 0 v - - 100 na t c = 125 c - - 500 zero gate voltage drain current i dss v gs = 0 v v ds = 48 v - - 1 a t c = 125 c - - 100 on-state drain current i d(on) v gs = 10 v v ds = 10 v - 2 - a drain-source on-state resistance b r ds(on) v gs = 5 v i d = 0.3 a - 2 5 ? v gs = 10 v i d = 1 a - 1.3 3 t c = 125 c - 2.4 5.6 forward transconductance b g fs v ds = 7.5 v, i d = 0.525 a 170 350 - ms diode forward voltage v sd i s = 0.99 a, v gs = 0 v 0.7 0.8 1.6 v dynamic input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz -3550 pf output capacitance c oss -2540 reverse transfer capacitance c rss -710 drain-source capacitance c ds -30- switching c turn-on time t on v dd = 25 v, r l = 23 ? i d ? 1 a, v gen = 10 v, r g = 25 ? -810 ns turn-off time t off -8.510
2n6660, 2n6660-2, 2N6660JANTX, 2N6660JANTXv www.vishay.com vishay siliconix s11-1542-rev. d, 01-aug-11 3 document number: 70223 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless ot herwise noted) ohmic region characteristics transfer characteristics on-resistance vs. drain current output characteristics for low gate drive on-resistance vs. gate-to-source voltage normalized on-resistance vs. junction temperature v ds -) v ( e g a t l o v e c r u o s - o t - n i a r d 2.0 0123 45 1.6 1.2 0.8 0.4 0 v gs = 10 v 8 v 7 v 6 v 5 v 4 v 3 v 2 v i d - drain current (a) v gs -) v ( e g a t l o v e c r u o s - e t a g 1.0 0.8 0.6 0 0 1 2 0 0.4 0.2 468 125 c 25 c v ds = 15 v t j = - 55 c i d - drain current (a) 2.5 2.0 1.5 0 0 . 2 4 . 0 0 1.0 0.5 0.8 1.2 1.6 v gs = 10 v r ds(on) - drain-source on-resistance ( ) i d - drain current (a) v ds - drain-to-source voltage (v) 2.0 v 100 0 0.4 0.8 1.2 1.6 2.0 80 60 40 20 0 2.8 v 2.6 v 2.4 v 2.2 v v gs = 10 v 1.8 v i d - drain current (ma) v gs - gate-source voltage (v) 2.8 048121620 2.4 2.0 1.6 0 1.2 0.8 0.4 1.0 a 0.5 a i d = 0.1 a r ds(on) - on-resistance ( ) t j - junction temperature (c) 2.25 2.00 1.75 0.50 -50 - 0 5 1 0 1 1.50 1.25 30 70 110 1.00 0.75 v gs = 10 v i d = 1.0 a 0.2 a r ds(on) - drain-source on-resistance (normalized)
2n6660, 2n6660-2, 2N6660JANTX, 2N6660JANTXv www.vishay.com vishay siliconix s11-1542-rev. d, 01-aug-11 4 document number: 70223 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless ot herwise noted) threshold region gate charge capacitance load condition effects on switching normalized thermal transient impedance, junction-to-ambient vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70223 . v gs - gate-to-source voltage (v) 10 1 0.01 0.5 0.1 1.0 1.5 2.0 v ds = 5 v 25 c - 55 c 125 c t j = 150 c i d - drain current (ma) q g - total gate charge (pc) 15.0 12.5 10.0 0 0 0 6 0 0 1 0 7.5 5.0 200 300 400 2.5 500 i d = 1.0 a v ds = 30 v 48 v v gs - gate-to-source voltage (v) v ds - drain-to-source voltage (v) c oss 120 100 80 0 0 5 0 1 0 60 40 20 30 40 20 c iss c rss v gs = 0 v f = 1 mhz c - capacitance (pf) i d - drain current (a) 0 1 1 1 . 0 100 10 1 50 20 5 2 v dd = 25 v r g = 25 v gs = 0 v to 10 v t d(off) t r t d(on) t f t - switching time (ns) normalized effective transient thermal impedance t 1 - square wave pulse duration (s) 0.1 10 k 1.0 0.01 0.1 0 0 1 0 . 1 k 1 0 1 1. duty cycle, d = 2. per unit base = r thjc = 20 c/w 3. t jm - t c = p dm z thjc (t) t 1 t 2 t 1 notes: p dm t 2 duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05 0.01
cd p ch q l1 l2 ld ll seating plane lu hd c l tw r tl lc 12 3 notes: 1. dimensions are in inches. metric equivalents are given for general information only. 2. beyond radius (r) maximum, tw shall be held for a minimum length of 0.011 (0.028 mm). 3. dimension tl measured from maximum hd. 4. outline in this zone is not controlled. 5. dimension cd shall not vary more than 0.010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at guage plane 0.054+0.001, ? 0.000 (1.37+0.03, ? 0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. 7. lu applies between l1 and l2, ld applies between l2 and l maximum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all three leads. 9. radius (r) applies to both inside corners of tab. 10. drain is electrically connected to the case. package information vishay siliconix document number: 71367 09-mar-04 www.vishay.com 1 to-205ad (to-39 tall lid) inches millimeters dim min max min max notes cd 0.305 0.335 7.75 8.51 ch 0.240 0.260 6.10 6.60 hd 0.335 0.370 8.51 9.40 lc 0.200 tp 5.08 tp 6 ld 0.016 0.021 0.41 0.53 7, 8 ll 0.500 0.750 12.70 19.05 7, 8 lu 0.016 0.019 0.41 0.48 7, 8 l1 ? 0.050 ? 1.27 7, 8 l2 0.250 ? 6.35 ? 7, 8 p 0.100 ? 2.54 ? 5 q ? 0.050 ? 1.27 4 r ? 0.010 ? 0.25 9 tl 0.029 0.045 0.74 1.14 3 tw 0.028 0.034 0.71 0.86 2  45  tp 45  tp 6 dimensions (see notes 1, 2, 9, 11, 12) ecn: s-40373?rev. c, 15-mar-04 dwg: 5511
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.


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